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AOT8N80 MOSFET Transistor

The AOT8N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT8N80 transistor as follows.

Circuit diagram symbol of the AOT8N80 transistor

AOT8N80 Transistor Specification

Transistor Code AOT8N80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.63Ohm
Power Dissipation (Maximum) PD 245W
Drain-Source Capacitance 101pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 51nS

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