AOT8N80 MOSFET Transistor

The AOT8N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT8N80 transistor as follows.

AOT8N80 Transistor Specification

Transistor Code		AOT8N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.63Ohm
Power Dissipation (Maximum)	PD	245W
Drain-Source Capacitance		101pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		51nS

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