AOT8N65 MOSFET Transistor

The AOT8N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT8N65 transistor as follows.

AOT8N65 Transistor Specification

Transistor Code		AOT8N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.15Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		101pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		51nS
Gate-Threshold Voltage (Maximum)		4.5V

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