AOT8N60 MOSFET Transistor

The AOT8N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT8N60 transistor as follows.

AOT8N60 Transistor Specification

Transistor Code		AOT8N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		109pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		63nS
Gate-Threshold Voltage (Maximum)		4.5V

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