AOT29S50 MOSFET Transistor

The AOT29S50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT29S50 transistor as follows.

AOT29S50 Transistor Specification

Transistor Code		AOT29S50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	29A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	357W
Drain-Source Capacitance		88pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		39nS

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