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AOT1N60 MOSFET Transistor

The AOT1N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT1N60 transistor as follows.

Circuit diagram symbol of the AOT1N60 transistor

AOT1N60 Transistor Specification

Transistor Code AOT1N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 9Ohm
Power Dissipation (Maximum) PD 41.7W
Drain-Source Capacitance 14.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6.7nS
Gate-Threshold Voltage (Maximum) 4.5V

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