AOT12N65 MOSFET Transistor

The AOT12N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT12N65 transistor as follows.

AOT12N65 Transistor Specification

Transistor Code		AOT12N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.72Ohm
Power Dissipation (Maximum)	PD	278W
Drain-Source Capacitance		152pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		77nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		39.8nC

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