AOT11N70 MOSFET Transistor

The AOT11N70 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT11N70 transistor as follows.

AOT11N70 Transistor Specification

Transistor Code		AOT11N70
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.87Ohm
Power Dissipation (Maximum)	PD	271W
Drain-Source Capacitance		146pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		74nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		37.5nC

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