AOT1100L MOSFET Transistor

The AOT1100L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT1100L transistor as follows.

AOT1100L Transistor Specification

Transistor Code		AOT1100L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	500W
Drain-Source Capacitance		721pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		3.8V
Total Gate Charge		82nC

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