AOT10N60 MOSFET Transistor

The AOT10N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT10N60 transistor as follows.

AOT10N60 Transistor Specification

Transistor Code		AOT10N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		66nS
Gate-Threshold Voltage (Maximum)		4.5V

UXPython is not the creator or an official representative of the AOT10N60 MOSFET transistor. You can download the official AOT10N60 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQP10N20 MOSFET Transistor FQP1N60 MOSFET Transistor FQP70N08 MOSFET Transistor AOT502 MOSFET Transistor IXTP4N95A MOSFET Transistor IPP020N06N MOSFET Transistor IPP147N03L MOSFET Transistor AOT12N65 MOSFET Transistor AP9962AGP-HF MOSFET Transistor AP78T10GP-HF MOSFET Transistor FQP2N50 MOSFET Transistor RU120N15R MOSFET Transistor AP95T07GP-HF MOSFET Transistor FQP1P50 MOSFET Transistor RU30100R MOSFET Transistor FQP17N08L MOSFET Transistor SFP830 MOSFET Transistor QM6006P MOSFET Transistor IPP034N03L MOSFET Transistor SSF7008 MOSFET Transistor