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AON6482 MOSFET Transistor

The AON6482 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AON6482 transistor as follows.

Circuit diagram symbol of the AON6482 transistor

AON6482 Transistor Specification

Transistor Code AON6482
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN5X6
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 28A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.037Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 2.7V

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