AON6162 MOSFET Transistor

The AON6162 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AON6162 transistor as follows.

AON6162 Transistor Specification

Transistor Code		AON6162
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN5X6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0021Ohm
Power Dissipation (Maximum)	PD	215W
Drain-Source Capacitance		1700pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		3.2V

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