AON5820 MOSFET Transistor

The AON5820 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AON5820 transistor as follows.

AON5820 Transistor Specification

Transistor Code		AON5820
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2X5
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0095Ohm
Power Dissipation (Maximum)	PD	1.7W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2600nS
Gate-Threshold Voltage (Maximum)		1V

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