AON5802B MOSFET Transistor

The AON5802B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AON5802B transistor as follows.

AON5802B Transistor Specification

Transistor Code		AON5802B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2X5
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		550nS
Gate-Threshold Voltage (Maximum)		1.5V

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