AON2809 MOSFET Transistor

The AON2809 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AON2809 transistor as follows.

AON2809 Transistor Specification

Transistor Code		AON2809
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2X2
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.068Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24.5nS
Gate-Threshold Voltage (Maximum)		0.9V

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