AOI9N50 MOSFET Transistor

The AOI9N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOI9N50 transistor as follows.

AOI9N50 Transistor Specification

Transistor Code		AOI9N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251A
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	178W
Drain-Source Capacitance		98pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		44nS
Gate-Threshold Voltage (Maximum)		4.5V

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