AOI7N65 MOSFET Transistor

The AOI7N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOI7N65 transistor as follows.

AOI7N65 Transistor Specification

Transistor Code		AOI7N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251A
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.56Ohm
Power Dissipation (Maximum)	PD	178W
Drain-Source Capacitance		86pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS
Gate-Threshold Voltage (Maximum)		4.5V

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