AOI4T60 MOSFET Transistor

The AOI4T60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOI4T60 transistor as follows.

AOI4T60 Transistor Specification

Transistor Code		AOI4T60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251A
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.1Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		5V

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