AOI409 MOSFET Transistor

The AOI409 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOI409 transistor as follows.

AOI409 Transistor Specification

Transistor Code		AOI409
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-251A
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		241pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		14.5nS
Gate-Threshold Voltage (Maximum)		2.4V

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