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AOI2N60A MOSFET Transistor

The AOI2N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOI2N60A transistor as follows.

Circuit diagram symbol of the AOI2N60A transistor

AOI2N60A Transistor Specification

Transistor Code AOI2N60A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251A
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.7Ohm
Power Dissipation (Maximum) PD 57W
Drain-Source Capacitance 30pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 4.5V

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