AOI2N60 MOSFET Transistor

The AOI2N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOI2N60 transistor as follows.

AOI2N60 Transistor Specification

Transistor Code		AOI2N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251A
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.4Ohm
Power Dissipation (Maximum)	PD	56.8W
Drain-Source Capacitance		29pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.3nS
Gate-Threshold Voltage (Maximum)		4.5V

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