AOI2610E MOSFET Transistor

The AOI2610E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOI2610E transistor as follows.

AOI2610E Transistor Specification

Transistor Code		AOI2610E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251A
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	46A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0095Ohm
Power Dissipation (Maximum)	PD	59.5W
Drain-Source Capacitance		300pF
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2.4V

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