AOI1N60 MOSFET Transistor

The AOI1N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOI1N60 transistor as follows.

AOI1N60 Transistor Specification

Transistor Code		AOI1N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251A
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	9Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		14.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.7nS
Gate-Threshold Voltage (Maximum)		4.5V

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