AOB7S65L MOSFET Transistor

The AOB7S65L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOB7S65L transistor as follows.

AOB7S65L Transistor Specification

Transistor Code		AOB7S65L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4V

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