AOB282L MOSFET Transistor

The AOB282L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOB282L transistor as follows.

AOB282L Transistor Specification

Transistor Code		AOB282L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	105A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	272.5W
Drain-Source Capacitance		960pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		58nC

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