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AOB12T60P MOSFET Transistor

The AOB12T60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOB12T60P transistor as follows.

Circuit diagram symbol of the AOB12T60P transistor

AOB12T60P Transistor Specification

Transistor Code AOB12T60P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.52Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 71pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 72nS

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