AOB12T60P MOSFET Transistor

The AOB12T60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOB12T60P transistor as follows.

AOB12T60P Transistor Specification

Transistor Code		AOB12T60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.52Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		71pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		72nS

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