AOB12N65L MOSFET Transistor

The AOB12N65L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOB12N65L transistor as follows.

AOB12N65L Transistor Specification

Transistor Code		AOB12N65L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.72Ohm
Power Dissipation (Maximum)	PD	278W
Drain-Source Capacitance		152pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		375nS
Gate-Threshold Voltage (Maximum)		4.5V

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