AOB12N50L MOSFET Transistor

The AOB12N50L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOB12N50L transistor as follows.

AOB12N50L Transistor Specification

Transistor Code		AOB12N50L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.52Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		167pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		69nS
Gate-Threshold Voltage (Maximum)		4.5V

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