AO6602G MOSFET Transistor

The AO6602G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AO6602G transistor as follows.

AO6602G Transistor Specification

Transistor Code		AO6602G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	1.15W
Drain-Source Capacitance		35pF
Rise Time		7.5nS
Gate-Threshold Voltage (Maximum)		2.5V

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