AO6602 MOSFET Transistor

The AO6602 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AO6602 transistor as follows.

AO6602 Transistor Specification

Transistor Code		AO6602
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5(2.7)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05(0.1)Ohm
Power Dissipation (Maximum)	PD	1.15W
Drain-Source Capacitance		35(42)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		1.5(4.1)nS
Gate-Threshold Voltage (Maximum)		2.5V

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