AO6409 MOSFET Transistor

The AO6409 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AO6409 transistor as follows.

AO6409 Transistor Specification

Transistor Code		AO6409
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.041Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		0.9V

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