AM9N65P MOSFET Transistor

The AM9N65P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AM9N65P transistor as follows.

AM9N65P Transistor Specification

Transistor Code		AM9N65P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.7Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		123pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		13.8nC

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