AM5480N MOSFET Transistor

The AM5480N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AM5480N transistor as follows.

AM5480N Transistor Specification

Transistor Code		AM5480N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2X3
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.086Ohm
Power Dissipation (Maximum)	PD	3.5W
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		3.6nC

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