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AM20N10-250DE MOSFET Transistor

The AM20N10-250DE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AM20N10-250DE transistor as follows.

Circuit diagram symbol of the AM20N10-250DE transistor

AM20N10-250DE Transistor Specification

Transistor Code AM20N10-250DE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.28Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 175°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 10nC

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