AM10P10-530I MOSFET Transistor

The AM10P10-530I is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AM10P10-530I transistor as follows.

AM10P10-530I Transistor Specification

Transistor Code		AM10P10-530I
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.53Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		88pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		49nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		9nC

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