The ALD1106DB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the ALD1106DB transistor as follows.
| Transistor Code | ALD1106DB | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TO-116 | |
| Drain-Source Voltage (Maximum) | VDS | 10V |
| Gate-Source Voltage (Maximum) | VGS | 10V |
| Drain Current (Maximum) | ID | 0.0048A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 500Ohm |
| Power Dissipation (Maximum) | PD | 0.5W |
| Operating Junction Temperature (Maximum) | 125°C | |
| Gate-Threshold Voltage (Maximum) | 1V | |
UXPython is not the creator or an official representative of the ALD1106DB MOSFET transistor. You can download the official ALD1106DB MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
ALD1106PBL MOSFET Transistor
ALD1103PBL MOSFET Transistor
ALD1105DB MOSFET Transistor
ALD1103DB MOSFET Transistor
ALD1105PBL MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.