ALD1106DB MOSFET Transistor

The ALD1106DB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ALD1106DB transistor as follows.

ALD1106DB Transistor Specification

Transistor Code		ALD1106DB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-116
Drain-Source Voltage (Maximum)	VDS	10V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.0048A
Drain-Source On-State Resistance (Maximum)	RDS(on)	500Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		125°C
Gate-Threshold Voltage (Maximum)		1V

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