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ALD1105SBL MOSFET Transistor

The ALD1105SBL is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ALD1105SBL transistor as follows.

Circuit diagram symbol of the ALD1105SBL transistor

ALD1105SBL Transistor Specification

Transistor Code ALD1105SBL
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOIC-14
Drain-Source Voltage (Maximum) VDS 10V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.04A
Drain-Source On-State Resistance (Maximum) RDS(on) 500Ohm
Power Dissipation (Maximum) PD 0.5W
Operating Junction Temperature (Maximum) 70°C
Gate-Threshold Voltage (Maximum) 1V

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