The ALD1105DB is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the ALD1105DB transistor as follows.
| Transistor Code | ALD1105DB | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | NP-Channel | |
| Package | TO-116 | |
| Drain-Source Voltage (Maximum) | VDS | 10V |
| Gate-Source Voltage (Maximum) | VGS | 10V |
| Drain Current (Maximum) | ID | 0.04A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 500Ohm |
| Power Dissipation (Maximum) | PD | 0.5W |
| Operating Junction Temperature (Maximum) | 125°C | |
| Gate-Threshold Voltage (Maximum) | 1V | |
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