ALD1102BPAL MOSFET Transistor

The ALD1102BPAL is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ALD1102BPAL transistor as follows.

ALD1102BPAL Transistor Specification

Transistor Code		ALD1102BPAL
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DIP-8
Drain-Source Voltage (Maximum)	VDS	10V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.02A
Drain-Source On-State Resistance (Maximum)	RDS(on)	270Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		70°C
Gate-Threshold Voltage (Maximum)		1.2V

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