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ALD1102APAL MOSFET Transistor

The ALD1102APAL is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ALD1102APAL transistor as follows.

Circuit diagram symbol of the ALD1102APAL transistor

ALD1102APAL Transistor Specification

Transistor Code ALD1102APAL
Transistor Type MOSFET
Control Channel Type P-Channel
Package DIP-8
Drain-Source Voltage (Maximum) VDS 10V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.02A
Drain-Source On-State Resistance (Maximum) RDS(on) 270Ohm
Power Dissipation (Maximum) PD 0.5W
Operating Junction Temperature (Maximum) 70°C
Gate-Threshold Voltage (Maximum) 1.2V

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