ALD1101PAL MOSFET Transistor

The ALD1101PAL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ALD1101PAL transistor as follows.

ALD1101PAL Transistor Specification

Transistor Code		ALD1101PAL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIP-8
Drain-Source Voltage (Maximum)	VDS	10V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.04A
Drain-Source On-State Resistance (Maximum)	RDS(on)	75Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		70°C
Gate-Threshold Voltage (Maximum)		1V

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