ALD1101ASAL MOSFET Transistor

The ALD1101ASAL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ALD1101ASAL transistor as follows.

ALD1101ASAL Transistor Specification

Transistor Code		ALD1101ASAL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC-8
Drain-Source Voltage (Maximum)	VDS	10V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.04A
Drain-Source On-State Resistance (Maximum)	RDS(on)	75Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		70°C
Gate-Threshold Voltage (Maximum)		1V

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