AFP8989 MOSFET Transistor

The AFP8989 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP8989 transistor as follows.

AFP8989 Transistor Specification

Transistor Code		AFP8989
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-89
Transistor SMD Code		89*
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.115Ohm
Power Dissipation (Maximum)	PD	1.45W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		12nC

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