AFP8803 MOSFET Transistor

The AFP8803 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP8803 transistor as follows.

AFP8803 Transistor Specification

Transistor Code		AFP8803
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8P
Transistor SMD Code		8803
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		15nC

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