AFP4435W MOSFET Transistor

The AFP4435W is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP4435W transistor as follows.

AFP4435W Transistor Specification

Transistor Code		AFP4435W
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8P
Transistor SMD Code		4435W
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		10nC

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