AFP2913W MOSFET Transistor

The AFP2913W is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP2913W transistor as follows.

AFP2913W Transistor Specification

Transistor Code		AFP2913W
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2X2-6L
Transistor SMD Code		W13*
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	6.5W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		5nC

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