AFP2911W MOSFET Transistor

The AFP2911W is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP2911W transistor as follows.

AFP2911W Transistor Specification

Transistor Code		AFP2911W
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2X2-6L
Transistor SMD Code		W11*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.096Ohm
Power Dissipation (Maximum)	PD	6.5W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		5nC

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