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AFP2319A MOSFET Transistor

The AFP2319A is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP2319A transistor as follows.

Circuit diagram symbol of the AFP2319A transistor

AFP2319A Transistor Specification

Transistor Code AFP2319A
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code A9*
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 65pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 5nC

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