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AFP2309 MOSFET Transistor

The AFP2309 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP2309 transistor as follows.

Circuit diagram symbol of the AFP2309 transistor

AFP2309 Transistor Specification

Transistor Code AFP2309
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code 09*
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.305Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 2.7nC

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