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AFN9972S MOSFET Transistor

The AFN9972S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN9972S transistor as follows.

Circuit diagram symbol of the AFN9972S transistor

AFN9972S Transistor Specification

Transistor Code AFN9972S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Transistor SMD Code 9972S
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 35A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 40W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 35nC

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