AFN8987W MOSFET Transistor

The AFN8987W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN8987W transistor as follows.

AFN8987W Transistor Specification

Transistor Code		AFN8987W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-89
Transistor SMD Code		87*
Drain-Source Voltage (Maximum)	VDS	90V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	1.45W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		12nC

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